Forming ferroelectric polymer memories

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United States of America Patent

PATENT NO 7727777
APP PUB NO 20030224535A1
SERIAL NO

10160641

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Abstract

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In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Andideh, Ebrahim 10141 NW. Priscilla Ct. 91 2225
Isenberger, Mark 78 Dulce Ct. 7 26
Leeson, Michael 111 NE. Graham St. 2 14
Rahnama, Mani 906 NW. Silverado Dr. 3 14

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