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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

• CREE, INC.

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Das, Mrinal K	Durham, US	23	291
Hull, Brett	Raleigh, US	19	93
Krishnaswami, Sumi	Morrisville, US	2	18

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 01, 2010	US,7727904,B2   US7727904B2	GRANTED PATENT AS SECOND PUBLICATION
September 25, 2008	US,20080233285,A1   US20080233285A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 7727904

Methods of forming SiC MOSFETs with high inversion layer mobility

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