Semiconductor device and manufacturing method thereof
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United States of America Patent
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Jun 8, 2010
Grant Date -
Dec 18, 2008
app pub date -
Aug 1, 2008
filing date -
Sep 29, 2005
priority date (Note) -
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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