Semiconductor method having silicon-diffused metal wiring layer
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United States of America Patent
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Jun 15, 2010
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app pub date -
Dec 29, 2006
filing date -
May 8, 2002
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Abstract
In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.
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