Silicon wafer and method for manufacturing the same
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United States of America Patent
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Jun 22, 2010
Grant Date -
May 10, 2007
app pub date -
Dec 22, 2006
filing date -
Aug 7, 2000
priority date (Note) -
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Abstract
, when a heat treatment is carried out at a temperature of 500-1000° C. for 1 to 24 hours. In the method for manufacturing the silicon wafer, moreover, the silicon wafer having the oxygen and carbon concentrations as controlled above is heat-treated at a temperature of 1100° C.-1380° C. for 1 to 10 hours. The control of the oxygen and carbon concentrations in the growth of a single crystal with CZ method allows a desired density of oxygen precipitates to be attained in the process of manufacturing devices and thereby sufficient gettering efficiency to be obtained.
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