Programmable resistive RAM and manufacturing method
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United States of America Patent
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Jun 22, 2010
Grant Date -
Jul 12, 2007
app pub date -
Jul 14, 2006
filing date -
Jan 9, 2006
priority date (Note) -
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Abstract
Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the programmable resistive elements from previous fabrication steps.
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