Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 7741642
SERIAL NO

11702058

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Abstract

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The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamatani, Toshiji Atsugi, JP 132 5322
Kuwabara, Hideaki Isehara, JP 313 24609
Maruyama, Junya Ebina, JP 219 10819
Murakami, Masakazu Atsugi, JP 140 2913
Ohno, Yumiko Atsugi, JP 100 3795
Takayama, Toru Atsugi, JP 530 27252
Yamazaki, Shunpei Setagaya, JP 7285 226692

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