Semiconductor device

United States of America Patent

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Jun 22, 2010
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Apr 30, 2009
app pub date
Oct 25, 2007
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Oct 25, 2007

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Abstract

, where 0.15≦R≦0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.

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Patent Owner	Address
UNITED MICROELECTRONICS CORP	HSIN-CHU

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Chen, Jung-Ching	Hsinchu, TW	22	225
Wang, Shyan-Yhu	Hsinchu County, TW	6	58
Wu, Shang-Chi	Hsinchu, TW	13	72
Yang, Ching-Ho	Hsinchu, TW	4	46

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Semiconductor device

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United States of America Patent

11924079

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PATENT NO	7741659
APP PUB NO	20090108348A1
SERIAL NO	11924079
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 22, 2010	US,7741659,B2 US7741659B2	GRANTED PATENT AS SECOND PUBLICATION
April 30, 2009	US,20090108348,A1 US20090108348A1	FIRST PUBLISHED PATENT APPLICATION

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11924079

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