Dielectric film capacitor and method of manufacturing the same
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United States of America Patent
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Jun 22, 2010
Grant Date -
Jun 7, 2007
app pub date -
Aug 23, 2006
filing date -
Aug 24, 2005
priority date (Note) -
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Abstract
A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.
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