Bulk monocrystalline gallium nitride
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United States of America Patent
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Jun 29, 2010
Grant Date -
May 13, 2004
app pub date -
Oct 14, 2003
filing date -
Jun 6, 2001
priority date (Note) -
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Abstract
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
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