Method of forming carbon nanotube on semiconductor substrate, method of forming semiconductor metal wire using the same, and method of fabricating inductor using the same
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United States of America Patent
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Jun 29, 2010
Grant Date -
May 27, 2010
app pub date -
Jul 31, 2006
filing date -
Aug 31, 2005
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device by filling carbon nanotubes in a recess is disclosed. The method of fabricating the semiconductor device comprises patterning a mold on a substrate, coating carbon nanotubes on an entire surface of the recess and the mold formed by the patterning, filling the carbon nanotubes coated on the an entire surface of the mold in the recess, and removing the mold.
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