Resistive memory cell fabrication methods and devices
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United States of America Patent
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Jun 29, 2010
Grant Date -
Oct 23, 2008
app pub date -
Apr 17, 2007
filing date -
Apr 17, 2007
priority date (Note) -
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Abstract
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.
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