Semiconductor device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 29, 2010
Grant Date -
Mar 12, 2009
app pub date -
Oct 14, 2008
filing date -
Nov 15, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
According to the present invention, contact plugs are formed by a CVD method without deteriorating the properties of the ferroelectric capacitor in a semiconductor device having a fine ferroelectric capacitor. Adhesive film is formed in a contact hole, which exposes an upper electrode of the ferroelectric capacitor after conducting heat treatment in an oxidizing atmosphere, and a W layer is deposited by the CVD method using such TiN adhesive film as a hydrogen barrier and the contact hole is filled.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully