Phase change memory devices and methods for fabricating the same
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United States of America Patent
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Jun 29, 2010
Grant Date -
Feb 21, 2008
app pub date -
Nov 17, 2006
filing date -
Aug 16, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Phase change memory devices and methods for fabricating the same. An exemplary phase change memory device includes a conductive element formed in a dielectric layer. A phase change material layer is formed in the dielectric layer. A conductive layer extends in the dielectric layer to respectively electrically connect the phase change layer and a sidewall of the conductive element.
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