Low temperature ALD SiO.sub.2
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United States of America Patent
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Jul 6, 2010
Grant Date -
May 15, 2008
app pub date -
Nov 14, 2006
filing date -
Nov 14, 2006
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Abstract
The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
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