Method of forming a variable resistance memory device comprising tin selenide
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United States of America Patent
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Jul 6, 2010
Grant Date -
Jul 31, 2008
app pub date -
Jan 11, 2008
filing date -
Jul 19, 2004
priority date (Note) -
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Abstract
A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device.
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