Methods and systems for determining a critical dimension and overlay of a specimen
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United States of America Patent
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Jul 6, 2010
Grant Date -
Nov 25, 2004
app pub date -
Mar 27, 2003
filing date -
Sep 20, 2000
priority date (Note) -
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Abstract
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and overlay misregistration. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
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