Phase change memory structures and methods

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United States of America Patent

PATENT NO 7754522
APP PUB NO 20100034016A1
SERIAL NO

12186992

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Abstract

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Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce thermal crosstalk associated with phase change memory cells, which can provide various benefits including improved data reliability and retention and decreased read and/or write times, among various other benefits. One or more embodiments can reduce the number of processing steps associated with providing local interconnects to phase change memory arrays.

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Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jun Boise, US 1497 18125

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