Method for manufacturing vertical CMOS image sensor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 13, 2010
Grant Date -
Jan 1, 2009
app pub date -
Jun 25, 2008
filing date -
Jun 26, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for manufacturing a vertical CMOS image sensor related to a semiconductor device is disclosed. A high-temperature double annealing process and/or an additional passivation nitride film are selectively applied in order to improve dark leakage characteristics and also to prevent or reduce an incidence of circular defects, thereby enhancing the quality and reliability of the vertical CMOS image sensor.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully