Nanospring

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United States of America Patent

PATENT NO 7759165
SERIAL NO

12395681

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Abstract

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A nanospring is formed by first forming a stack of alternating layers of materials which have different susceptibilities to a selective etch solution. The stack is formed over a substrate and is subsequently etched with a substantially non-isotropic etch to create a via having substantially straight sidewalls. The sidewalls of the via are exposed to the selective etch solution, thereby creating irregular sidewalls of the via. A metal film is conformally deposited within the via, and, after excess metal is removed, the stack of alternating layers of materials is etched to expose remaining portions of the conformably deposited film, which comprise the nanospring.

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Patent Owner(s)

Patent OwnerAddress
BAJAJ RAJEEVNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bajaj, Rajeev 43651 Skye Rd. 162 3380

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