Semiconductor device and a method of manufacturing the same
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United States of America Patent
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Jul 20, 2010
Grant Date -
Sep 20, 2007
app pub date -
Feb 1, 2007
filing date -
Mar 20, 2006
priority date (Note) -
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Abstract
A memory cell has a control gate electrode disposed on a main surface of a semiconductor substrate through a gate insulating film, an ONO film disposed along a side surface of the control gate electrode and the main surface of semiconductor substrate, a memory gate electrode disposed on a side surface of the control gate electrode and also on the main surface of the semiconductor substrate through the ONO film. The control gate electrode and the memory gate electrode are formed, over the upper portions thereof, with a silicide film and an insulating film formed by oxidation of the surface of the silicide film, respectively.
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