Elevated bipolar transistor structure
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United States of America Patent
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Jul 20, 2010
Grant Date -
May 1, 2008
app pub date -
Jan 26, 2007
filing date -
Oct 31, 2006
priority date (Note) -
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Abstract
A semiconductor structure includes a substrate; an isolation structure in the substrate, wherein the isolation structure defines a region therein; a first semiconductor region having at least a portion in the region defined by the isolation structure, wherein the first semiconductor region is of a first conductivity type; a second semiconductor region on the first semiconductor region, wherein the second semiconductor region is of a second conductivity type opposite the first conductivity type; and a third semiconductor region of the first conductivity type on the second semiconductor region, wherein the third semiconductor region has at least a portion higher than a top surface of the isolation structure.
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