High current semiconductor power device SOIC package
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United States of America Patent
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Jul 20, 2010
Grant Date -
Aug 28, 2008
app pub date -
Oct 6, 2006
filing date -
Jul 20, 2004
priority date (Note) -
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Abstract
A high current semiconductor power SOIC package is disclosed. The package includes a relatively thick lead frame formed of a single gauge material having a thickness greater than 8 mils, the lead frame having a plurality of leads and a first lead frame pad, the first lead frame pad including a die soldered thereto; a pair of lead bonding areas being disposed in a same plane of a top surface of the die; large diameter bonding wires connecting the die to the plurality of leads, the bonding wires being aluminum; and a resin body encapsulating the die, bonding wires and at least a portion of the lead frame.
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