Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask
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United States of America Patent
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Aug 3, 2010
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app pub date -
Oct 24, 2008
filing date -
Dec 14, 2004
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Abstract
An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.
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