Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same

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United States of America Patent

PATENT NO 7767507
APP PUB NO 20070114534A1
SERIAL NO

11655168

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Abstract

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, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.

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Patent Owner(s)

  • SAMSUNG DISPLAY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Park, Hye Hyang Suwon, KR 19 92
Park, Ji Yong Suwon, KR 111 348

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