Plasma immersion ion implantation reactor having an ion shower grid
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United States of America Patent
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Aug 3, 2010
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app pub date -
Jul 20, 2004
filing date -
Jul 20, 2004
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Abstract
A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
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