Multi-layer chalcogenide devices

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United States of America Patent

PATENT NO 7767992
APP PUB NO 20070034849A1
SERIAL NO

11451913

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Abstract

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A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes one or more chalcogenide materials and a layer of Sb. The devices offer the advantages of minimal conditioning requirements, fast set speeds, high reset resistances and low set resistances.

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Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Czubatyj, Wolodymyr Warren, US 67 5770
Kostylev, Sergey A Bloomfield Hills, US 26 1424
Lowrey, Tyler San Jose, US 149 5841
Sandoval, Regino Rochester Hills, US 11 231

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