Ferroelectric thin films
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United States of America Patent
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Aug 3, 2010
Grant Date -
Mar 13, 2008
app pub date -
Jul 9, 2007
filing date -
Jul 7, 2006
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Abstract
Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.
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