Memory device having wide area phase change element and small electrode contact area
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United States of America Patent
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Aug 10, 2010
Grant Date -
Mar 13, 2008
app pub date -
Sep 11, 2006
filing date -
Sep 11, 2006
priority date (Note) -
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Abstract
A memory cell device of the type that includes a memory material switchable between electrical property states by application of energy, situated between first and second (“bottom” and “top”) electrodes has a top electrode including a larger body portion and a stem portion. The memory material is disposed as a layer over a bottom electrode layer, and a base of the stem portion of the top electrode is in electrical contact with a small area of the surface of the memory material. Methods for making the memory cell are described.
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