Non-volatile memory with both single and multiple level cells

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United States of America Patent

PATENT NO 7773418
APP PUB NO 20090086539A1
SERIAL NO

12329932

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Abstract

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Memory arrays, and modules, devices and systems that utilize such memory arrays, are described as having a single level non-volatile memory cell interposed between and coupled to a select gate and a multiple level non-volatile memory cell. Various embodiments include structure, process, and operation and their applicability for memory devices and systems. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of single level non-volatile memory cells and a number of multiple level non-volatile memory cells, where a first select gate is coupled to a first single level non-volatile memory cell interposed between and coupled to the first select gate and a first multiple level non-volatile memory cell.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aritome, Seiichi Hsinchu County, TW 291 8244

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