Semiconductor device having damascene interconnection structure that prevents void formation between interconnections
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United States of America Patent
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Aug 17, 2010
Grant Date -
Oct 2, 2003
app pub date -
Mar 27, 2003
filing date -
Jun 11, 1998
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.
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