Electrical parameter extraction for integrated circuit design

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United States of America Patent

PATENT NO 7783999
APP PUB NO 20090187866A1
SERIAL NO

12016661

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Abstract

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A system, method, and computer readable medium for generating a parameterized and characterized pattern library for use in extracting parasitics from an integrated circuit design is provided. In an embodiment, a layout of an interconnect pattern is provided. A process simulation may be performed on the interconnect pattern. In a further embodiment, the interconnect pattern is dissected into a plurality of segments taking into account OPC rules. A parasitic resistance and/or parasitic capacitance associated with the interconnect pattern may be determined by a physical model and/or field solver.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Ying-Chou Taipei County, TW 26 375
Doong, Yih-Yuh Hsin-Chu, TW 17 198
Hou, Cliff Taipei, TW 21 427
Ku, Yao-Ching Hsin-Chu, TW 34 395
Lai, Chih-Ming Hsin-Chu, TW 485 10832
Lin, Chia-Chi Hsin-Chu, TW 48 407
Liu, Ru-Gun Hsin-Chu, TW 404 6961
Ou, Tsong-Hua Taipei, TW 41 513
Wu, Min-Hong Nantou County, TW 4 67

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