Method for making a pillar-type phase change memory element
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United States of America Patent
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Aug 31, 2010
Grant Date -
Jan 17, 2008
app pub date -
Jul 12, 2006
filing date -
Jul 12, 2006
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Abstract
A pillar-type phase change memory element comprises first and second electrode elements and a phase change element therebetween. A second electrode material and a chlorine-sensitive phase change material are selected. A first electrode element is formed. The phase change material is deposited on the first electrode element and the second electrode material is deposited on the phase change material. The second electrode material and the phase change material are etched without the use of chlorine to form a second electrode element and a phase change element. The second electrode material selecting step, the phase change material selecting step and the etching procedure selecting step are carried out so that the phase change element is not undercut relative to the second electrode element during etching.
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