Methods for oriented growth of nanowires on patterned substrates
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United States of America Patent
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Aug 31, 2010
Grant Date -
Feb 14, 2008
app pub date -
Dec 20, 2006
filing date -
Apr 30, 2004
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Abstract
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
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