Method of forming a memory device incorporating a resistance-variable chalcogenide element

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Aug 31, 2010
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Aug 28, 2008
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Feb 28, 2008
filing date
Aug 12, 2004

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Expired

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Abstract

A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.

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Patent Owner	Address
MICRON TECHNOLOGY INC	BOISE ID

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Campbell, Kristy A	Boise, US	139	2492

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Method of forming a memory device incorporating a resistance-variable chalcogenide element

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United States of America Patent

12073055

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PATENT NO	7785976
APP PUB NO	20080206920A1
SERIAL NO	12073055
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
August 31, 2010	US,7785976,B2 US7785976B2	GRANTED PATENT AS SECOND PUBLICATION
August 28, 2008	US,20080206920,A1 US20080206920A1	FIRST PUBLISHED PATENT APPLICATION

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12073055

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