Memory structure with reduced-size memory element between memory material portions
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United States of America Patent
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Aug 31, 2010
Grant Date -
Oct 9, 2008
app pub date -
Apr 3, 2007
filing date -
Apr 3, 2007
priority date (Note) -
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Abstract
A memory cell device includes a memory cell access layer, a dielectric material over the memory cell access layer, a memory material structure within the dielectric material, and a top electrode in electrical contact with the memory material structure. The memory material structure has upper and lower memory material portions and a memory material element therebetween. The lower memory material layer is in electrical contact with a bottom electrode. The lower memory material layer has an average lateral dimension. The memory material element defines an electrical property state change region therein and has a minimum lateral dimension which is substantially less than the average lateral dimension. In some examples the memory material element is a tapered structure with the electrical property state change region at the junction of the memory material element and the lower memory material layer.
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