Dense non-volatile memory array and method of fabrication

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United States of America Patent

PATENT NO 7786512
APP PUB NO 20070051982A1
SERIAL NO

11489747

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Abstract

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per cell (where F is a minimum feature size), and periphery elements to control the memory cells. The present invention also includes a non-volatile memory array which includes word lines and bit lines generally perpendicular to the word lines, with a word line pitch of less than 2 F. In one embodiment, the word lines are made of polysilicon spacers.

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Patent Owner(s)

Patent OwnerAddress
MORGAN STANLEY SENIOR FUNDING1585 BROADWAY STREET NEW YORK NY 10036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bloom, Ilan Haifa, IL 26 571
Eitan, Boaz Ra'anana, IL 149 7589
Irani, Rustom Santa Clara, US 14 123

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