High-voltage vertical transistor with edge termination structure
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United States of America Patent
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Aug 31, 2010
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app pub date -
Feb 3, 2005
filing date -
Sep 7, 2001
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Abstract
A high-voltage transistor includes a drain, a source, and one or more drift regions extending from the drain toward the source. A field plate member laterally surrounds the drift regions and is insulated from the drift regions by a dielectric layer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).
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