Trimming technique for high voltage amplifiers using floating low voltage structures
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United States of America Patent
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Aug 31, 2010
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app pub date -
Mar 21, 2008
filing date -
Mar 21, 2008
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Abstract
The system contains a first MOS transistor having a first source element, a first drain element, and a first gate element. A first low voltage current source has two ends. The ends of the low voltage current source are connected to at least two of the first MOS transistor elements. At least one first Zener clamp is in parallel with the low voltage current source.
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