Memory cell having a buried phase change region and method for fabricating the same
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United States of America Patent
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Sep 7, 2010
Grant Date -
Oct 22, 2009
app pub date -
Apr 22, 2008
filing date -
Apr 22, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
Memory cells are described along with methods for manufacturing. A memory cell as described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion having a width less than that of the base portion. A dielectric surrounds the bottom electrode and has a top surface. A memory element is overlying the bottom electrode and includes a recess portion extending from the top surface of the dielectric to contact the pillar portion of the bottom electrode, wherein the recess portion of the memory element has a width substantially equal to the width of the pillar portion of the bottom electrode. A top electrode is on the memory element.
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