Power semiconductor component with trench-type second contact region
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United States of America Patent
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Sep 7, 2010
Grant Date -
Jul 16, 2009
app pub date -
Dec 22, 2008
filing date -
Dec 21, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A power semiconductor component and method for producing it. The component has a semiconductor base body with a first doping and a pn junction formed by a contact region having a second doping with a doping profile in the base body. The second contact region is arranged at a second surface of the base body and extends into the base body. The base body has a trench-type cutout with an edge area and a base area, wherein the base area is formed as a second partial area of the second surface, and wherein the second contact region extends from the base area via the edge area as far as a first partial area. Furthermore, the pn junction has a curvature adjacent to the edge area.
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