Gas ring and method of processing substrates
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United States of America Patent
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Sep 14, 2010
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app pub date -
Oct 19, 2005
filing date -
Oct 19, 2005
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Abstract
A process gas to a reactor volume of a semiconductor processing reactor is provided through gas injector ports of a gas ring. The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor to exhaust ports of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports.
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