Semiconductor device and method of fabricating the same
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United States of America Patent
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Sep 14, 2010
Grant Date -
Dec 3, 2009
app pub date -
Jun 3, 2008
filing date -
Jun 3, 2008
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device is provided. First, a first electrode is formed over a first region of a substrate. Then, a dielectric layer covering the first electrode is formed over the substrate. After that, a plurality of openings is formed on the first region of the substrate. Thereafter, a conductive layer covering the dielectric layer and the openings is formed over the substrate. Then, the conductive layer in the bottom of the openings is removed to form second electrodes. After that, the dielectric layer between the second electrode and the first electrode is removed.
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