Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate
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United States of America Patent
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Sep 14, 2010
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app pub date -
Jun 25, 2009
filing date -
Nov 26, 1997
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Abstract
We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of the metal seed layer on the wafer via plasma deposition at a sufficient ratio of wafer substrate bias to DC source power that bottom coverage is achieved while resputtering of surfaces of the recessed device features is inhibited. The method also comprises depositing a second portion of the metal seed layer at a ration of substrate RF bias to DC source power such that resputtering is not inhibited.
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