A method for manufacturing a trench MOSFET semiconductor device comprises: providing a heavily doped N+ silicon substrate; forming an N type epitaxial layer; forming a thick SiO2 layer; creating P body and source area formations by ion implantation without any masks; utilizing a first mask to define openings for a trench gate and a termination; thermally growing a gate oxide layer followed by formation of a thick poly-Silicon refill layer without a mask to define a gate bus area; forming sidewall spacers; forming P+ areas; removing the sidewall spacers; depositing tungsten to fill contacts and vias; depositing a first thin barrier metal layer; depositing a first thick metal layer; utilizing a second metal mask to open a gate bus area; forming second sidewall spacers; depositing a second thin barrier metal layer; depositing a second thick metal layer; and planarizing at least the second thick metal layer and the second thin metal layer to isolate the source metal portions from gate metal portions, whereby the trench MOSFET semiconductor device is manufactured utilizing only first and second masks.
Please note there is up to 60 days of latency in this Status indicator for certain status conditions. You can obtain up-to-date Status indicator readings by ordering PAIR for the file.
An application with the status "Published" (which means it is pending) may be recently abandoned, but not yet updated to reflect its abandoned status. However, an application filed less than one year ago is unlikely to be abandoned.
A patent with the status "Granted" may be recently expired, but not yet updated to reflect its expired status. However, it is highly unlikely a patent less than 3.5 years old would be expired.
An application with the status "Abandoned" is almost always current, but there is a small chance it was recently revived and the status not yet updated.
This priority date is an estimated earliest
priority date and is purely an estimation. This date should not be
taken as legal conclusion. No representations are made as to the
accuracy of the date listed. Please consult a legal professional
before relying on this date.