Ruthenium alloy film for copper interconnects
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United States of America Patent
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Sep 21, 2010
Grant Date -
Aug 20, 2009
app pub date -
May 29, 2008
filing date -
Feb 19, 2008
priority date (Note) -
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Abstract
A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer.
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