Integrated circuit with metal silicide regions
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United States of America Patent
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Sep 21, 2010
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app pub date -
Jun 22, 2007
filing date -
Sep 17, 2002
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Abstract
A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heated to form the silicide, the titanium getters silicon dioxide on the surface of the silicon region and the titanium nitride promotes the formation of a smooth surface at the interface between the silicide layer and the underlying silicon region.
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