Semiconductor device having a trim cut and method of evaluating laser trimming thereof
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United States of America Patent
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Sep 21, 2010
Grant Date -
Mar 26, 2009
app pub date -
Nov 18, 2008
filing date -
Jul 21, 2005
priority date (Note) -
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Abstract
A method of evaluating laser trimming of a semiconductor device having a thin film resistor is disclosed. The method includes the steps of providing the thin film resistor and laser trimming the thin film resistor by creating a first trim cut. The first trim cut bisects the thin film resistor such that the thin film resistor is divided into a first portion and a second portion. Also, the method involves measuring the insulation resistance of the thin film resistor. In addition, the method involves evaluating the trim cut based on the measured insulation resistance.
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