Polysilicon thin film transistor and method of fabricating the same
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United States of America Patent
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Sep 28, 2010
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app pub date -
Aug 22, 2006
filing date -
Aug 22, 2005
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Abstract
A polysilicon thin film transistor (TFT) may include a substrate, at least one insulating layer, a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a heat retaining layer formed to contact the semiconductor layer. The heat retaining layer may reduce and/or prevent a reduction in a melt duration time of amorphous silicon during a crystallization process for forming a polysilicon layer of the TFT.
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