Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
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United States of America Patent
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Sep 28, 2010
Grant Date -
May 14, 2009
app pub date -
Nov 14, 2007
filing date -
Nov 14, 2007
priority date (Note) -
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Abstract
Memory devices are described along with manufacturing methods. An embodiment of a memory device as described herein includes a bottom electrode, a thermal protect structure on the bottom electrode, and a multi-layer stack on the thermal protect structure. The thermal protect structure comprises a layer of thermal protect material, the thermal protect material having a thermal conductivity less than that of the bottom electrode material.
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